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- W1979842232 abstract "A GaN MIS-HEMT with nitrogen (N)-passivation for power device applications is demonstrated. In this letter, nitrogen radicals were adopted to recover nitrogen-vacancy-related defects which were formed due to the thermal decomposition and evaporation of nitrogen atoms from GaN surface during high-temperature process. Besides, nitrogen radicals can also remove impurities and reduce surface dangling bonds by forming Ga-N bonds on the SiN/GaN interface. With N-passivation, the device shows high ON/OFF current ratio, steep subthreshold slope, low OFF-state leakage current, high breakdown voltage, and improved dynamic ON-resistance. The device reliability under high-electric field stress was also improved as a result." @default.
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- W1979842232 date "2014-10-01" @default.
- W1979842232 modified "2023-10-16" @default.
- W1979842232 title "GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications" @default.
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- W1979842232 doi "https://doi.org/10.1109/led.2014.2345130" @default.
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