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• W1979860764 abstract "Ge-doped In0.5Ga0.5P epilayers grown on semi-insulating GaAs(100) substrates by the liquid phase epitaxy technique were investigated by using photoluminescence (PL) and Hall effect measurements. The Ge dopant existing in the In0.5Ga0.5P showed amphoteric behavior with a compensation ratio between 0.4 and 0.6. Exciton transitions involving the shallow Ge acceptor were identified by using PL measurements, and the ionization energy of the Ge acceptor was determined to be 47 meV, which was reasonable with a hydrogenic acceptor value. The results of Hall effect measurements showed that the ionization energy of the Ge shallow donor varied from 6 to 10 meV increasing the carrier concentrations." @default.
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• W1979860764 date "2001-03-01" @default.
• W1979860764 modified "2023-10-10" @default.
• W1979860764 title "Amphoteric behavior of Ge dopants in In0.5Ga0.5P epilayers grown on GaAs(100) substrates" @default.
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• W1979860764 doi "https://doi.org/10.1016/s0022-3697(00)00224-9" @default.
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