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- W1979882014 abstract "We report a molecular beam epitaxial growth of Na3Bi single-crystal thin films on two different substrates—epitaxial bilayer graphene terminated 6H-SiC(0001) and Si(111). Using reflection high-energy electron diffraction, we found that the lattice orientation of the grown Na3Bi thin film was rotated by 30° respect to the surface lattice orientations of these two substrates. An in-situ angle-resolved photoemission spectroscopy clearly revealed the 3-dimensional Dirac-cone band structure in such thin films. Our approach of growing Na3Bi thin film provides a potential route for further studying its intriguing electronic properties and for fabricating it into practical devices in future." @default.
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- W1979882014 date "2014-07-21" @default.
- W1979882014 modified "2023-09-24" @default.
- W1979882014 title "Molecular beam epitaxial growth of a three-dimensional topological Dirac semimetal Na3Bi" @default.
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- W1979882014 doi "https://doi.org/10.1063/1.4890940" @default.
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