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• W1979937892 abstract "Two competing mechanisms of intrinsic defect formation in amorphous ${text{SiO}}_{2}$ $(a{text{-SiO}}_{2})$, i.e., the vacancy-interstitial (Frenkel) mechanism and Si-O bond dissociation to form silicon and oxygen dangling bonds, were compared under $ensuremath{gamma}$-ray electronic excitation. The Frenkel mechanism was found to be dominant. The concentrations of both kinds of defects strongly correlate with the degree of the structural disorder of $a{text{-SiO}}_{2}$, providing experimental evidence that both types of intrinsic defect pairs are formed mainly from the strained Si-O-Si bonds. The bond dissociation mechanism is more susceptible to the structural disorder than the vacancy-interstitial mechanism." @default.
• W1979937892 created "2016-06-24" @default.
• W1979937892 creator A5007812423 @default.
• W1979937892 creator A5031856521 @default.
• W1979937892 creator A5078054212 @default.
• W1979937892 creator A5086828979 @default.
• W1979937892 date "2008-09-16" @default.
• W1979937892 modified "2023-09-27" @default.
• W1979937892 title "Intrinsic defect formation in amorphous<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow><mml:mtext>SiO</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>by electronic excitation: Bond dissociation versus Frenkel mechanisms" @default.
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• W1979937892 doi "https://doi.org/10.1103/physrevb.78.094201" @default.
• W1979937892 hasPublicationYear "2008" @default.
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