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• W1979965760 abstract "Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO${}_{3}$ ($n$-BTO). The coexistence of a ferroelectric phase and conductivity opens the door to new functionalities that may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling, we explore the effect that the switchable polarization of $n$-BTO has on the electronic properties of the SrRuO${}_{3}$/$n$-BTO (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the $n$-BTO conduction band determines the transport regime across the interface. The interface exhibits a Schottky tunnel barrier for one polarization orientation, whereas an Ohmic contact is present for the opposite polarization orientation, leading to a large change in interface resistance associated with polarization reversal. Our calculations reveal a five orders of magnitude change in the interface resistance because of polarization switching." @default.
• W1979965760 created "2016-06-24" @default.
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• W1979965760 date "2013-10-30" @default.
• W1979965760 modified "2023-10-01" @default.
• W1979965760 title "Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface" @default.
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• W1979965760 doi "https://doi.org/10.1103/physrevb.88.165139" @default.
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