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- W1979969014 abstract "Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III–V compound semiconductors. Also reviewed are applications of MacEtch produced high aspect ratio Si nanostructures in photovoltaics, where the p–n junction can be in the planar Si tray, core–shell, or axial geometry, with nanowire, micropillar, or hole arrays serving as light trapping or carrier collection structures. The prospect of using MacEtch to improve the cost and efficiency of photovoltaic cells is discussed." @default.
- W1979969014 created "2016-06-24" @default.
- W1979969014 creator A5080271103 @default.
- W1979969014 date "2012-04-01" @default.
- W1979969014 modified "2023-10-18" @default.
- W1979969014 title "Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics" @default.
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- W1979969014 doi "https://doi.org/10.1016/j.cossms.2011.11.002" @default.
- W1979969014 hasPublicationYear "2012" @default.
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