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- W1979993485 abstract "The observation of the electronic Raman scattering in n-Ga1-xAlxAs (x > 0.45) is reported and the charge state of DX centers in III-V alloy semiconductors is discussed. The result shows clearly that the electronic Raman scattering in n-Ga1-xAlxAs of indirect band-gap and the persistent photoconductivity in n-Ga1-xAlxAs of direct band-gap are equivalent to each other. Both of them originate from the optical induced metastable state of donors in n-Ga1-xAlxAs (x > 0.22) at low temperatures. At higher temperatures, this hydrogen-like level is depopulated to the benefit of a stable DX-like deep state." @default.
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- W1979993485 date "1998-02-01" @default.
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- W1979993485 title "Charge States of DX Centers and Electronic Raman Scattering in n-Ga 1- x Al x As" @default.
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- W1979993485 doi "https://doi.org/10.1088/0256-307x/15/2/018" @default.
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