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- W1980007985 abstract "Abstract Fluorinated silicon oxide (FSG) films with varying fluorine (F) content were prepared by plasma-enhanced chemical vapor deposition (PECVD) using TEOS, O2, and either C2F6 or NF3. Metal films (Al, Cu–1% Al, Cu) were deposited on the FSG either directly or with a barrier layer (Ta, TaN) between the metal and the FSG. In addition, undoped PECVD SiO2 was studied as a capping layer on the FSG. Compositional depth profiles were obtained with both XPS and nuclear reaction analysis (NRA). F diffused rapidly through Ta, TaN and Al, and reacted with Al on the top surface. On the other hand, regardless of barrier layers, Cu showed almost no reaction with F. F diffusion was also observed through PECVD SiO2." @default.
- W1980007985 created "2016-06-24" @default.
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- W1980007985 date "1999-06-01" @default.
- W1980007985 modified "2023-10-02" @default.
- W1980007985 title "The interaction of metals and barrier layers with fluorinated silicon oxides" @default.
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- W1980007985 doi "https://doi.org/10.1016/s0038-1101(99)00018-0" @default.
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