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• W1980044967 abstract "We present a novel technique to grow AlN on sapphire heteroepitaxially by the use of high-density active nitrogen species, which are generated at the resonance point of nitrogen-ECR plasma, where metal Al is evaporated. The AlN film having the c -axis perpendicular to the c -plane of sapphire was obtained at the growth rate of 0.5 μm/h with the substrate temperature lower than 600°C. The film had the band gap energy of 6.0 eV and good Raman selection rules." @default.
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• W1980044967 date "2000-02-01" @default.
• W1980044967 modified "2023-09-24" @default.
• W1980044967 title "Heteroepitaxial growth of AlN at the resonance point of nitrogen-ECR plasma" @default.
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• W1980044967 doi "https://doi.org/10.1016/s0022-0248(99)00580-1" @default.
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