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• W1980058821 abstract "The formation and detailed characterisations of a 200 mm germanium-on-insulator substrate made from germanium bulk material as donor wafer using the Smart CutTM technology is reported. Detailed characterisations of final GeOI structures are presented: final roughness, defectivity evaluation, thickness measurement, and electrical characterisation." @default.
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• W1980058821 date "2006-01-01" @default.
• W1980058821 modified "2023-10-14" @default.
• W1980058821 title "Fabrication and characterisation of 200 mm germanium-on-insulator (GeOI) substrates made from bulk germanium" @default.
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• W1980058821 doi "https://doi.org/10.1049/el:20060208" @default.
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