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• W1980065550 abstract "A bulge test setup was used to determine the fracture toughness of amorphous low-pressure chemical vapor deposited (LPCVD) silicon nitride films with various thicknesses in the range 40–108 nm. A crack-like slit was milled in the center of each free-standing film with a focused ion beam, and the membrane was deformed in the bulge test until failure occurred. The fracture toughness K IC was calculated from the pre-crack length and the stress at failure. It is shown that the membrane is in a transition state between pure plane-stress and plane-strain which, however, had a negligible influence on the measurement of the fracture toughness, because of the high brittleness of silicon nitride and its low Young’s modulus over yield strength ratio. The fracture toughness K IC was found to be constant at 6.3 ± 0.4 MPa m 1/2 over the whole thickness range studied, which compares well with bulk values. This means that the fracture toughness, like the Young’s modulus, is a size-independent quantity for LPCVD silicon nitride. This presumably holds true for all amorphous brittle ceramic materials." @default.
• W1980065550 created "2016-06-24" @default.
• W1980065550 creator A5024216416 @default.
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• W1980065550 date "2011-02-01" @default.
• W1980065550 modified "2023-10-03" @default.
• W1980065550 title "Fracture toughness of silicon nitride thin films of different thicknesses as measured by bulge tests" @default.
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• W1980065550 doi "https://doi.org/10.1016/j.actamat.2010.11.043" @default.
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