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- W1980130003 abstract "This paper proposes a new wafer thinning method in bonding silicon-on-insulator (SOI) technology. With this new method, thermal oxidation is performed on thin boron-doped Si films after highly selective back-etching to reduce the boron concentration in the film. The boron concentration in the silicon layer on oxide can be decreased more than 2 figures under proper thermal oxidation conditions. A 90-nm-thick silicon layer with 4×10 17 /cm 3 boron concentration was formed on an insulator by this method. Transmission electron microscope (TEM) observation shows that the silicon layer has a highly crystalline quality. It is also found that the reflow of borophosphosilicate glass (BPSG) can effectively fill in the small surface gaps during wafer bonding." @default.
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- W1980130003 date "1991-06-01" @default.
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- W1980130003 title "A New Thinning Method for Obtaining Less than 100-nm-Thick Si Film on Wafer Bonding" @default.
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- W1980130003 doi "https://doi.org/10.1143/jjap.30.1154" @default.
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