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• W1980140202 startingPage "L581" @default.
• W1980140202 abstract "Melting and growth processes of a thin Sn crystal with low dislocation density have been investigated using synchrotron radiation and a TV imaging system. When the melting rate is less than 2.7 mm/min, the melting interface follows a circular equal-melting point interface and appears to be homogeneously smooth. No facet growth is seen at a growth rate of 2.3 mm/min. Most of the dislocations do not propagate into a newly grown crystal and the homogeneous solidification results in a nearly perfect crystal. Dislocations and slip bands were found to generate from a part where the solidification was completed." @default.
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• W1980140202 date "1984-08-01" @default.
• W1980140202 modified "2023-09-23" @default.
• W1980140202 title "In Situ Observation on Melt Growth Process of Tin Crystal by Means of Synchrotron X-Ray Topography" @default.
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• W1980140202 doi "https://doi.org/10.1143/jjap.23.l581" @default.
• W1980140202 hasPublicationYear "1984" @default.
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