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- W1980147132 abstract "High energy electron irradiation (HEEI) was performed on Au/n-ZnO Schottky diodes (SDs) and the effects of irradiation were compared with a reference SD. Current–voltage and capacitance–voltage measurements revealed that the barrier height and donor concentration decrease from 0.746 to 0.665 eV and from 4.55 × 1014 cm−3 to 1.76 × 1014 cm−3, respectively, while the ideality factor increases from 1.61 to 3.95 after irradiation. Ionization temperatures of traps were observed by means of thermally stimulated capacitance measurements at temperatures 307 K, 365 K and 332 K, 385 K and 477 K for the irradiated and the reference SDs, respectively. Deep level transient spectroscopy measurements revealed a defect level at 870 meV and capture cross sections of 0.88 × 1012 cm2 for the reference SD and two HEEI induced defects at energies 670 and 780 meV and capture cross sections of 29.6 × 10−12 cm2 and 3.08 × 10−12 cm2 for the irradiated SD, respectively." @default.
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- W1980147132 date "2008-04-08" @default.
- W1980147132 modified "2023-09-27" @default.
- W1980147132 title "High energy electron irradiation effects on electrical properties of Au/n-ZnO Schottky diodes" @default.
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- W1980147132 doi "https://doi.org/10.1088/0022-3727/41/10/105301" @default.
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