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- W1980168246 abstract "The promising hardness of multicomponent TiSiN films reported recently encourages a systematic investigation on the microstructure of the films. In this paper, an attempt is made to correlate the surface hardness with the microstructural change as a function of Si concentration controlled by SiH4 flow rate. The TiSiN films were deposited using plasma-enhanced chemical vapor deposition (PECVD) with SiH4, TiCl4, N2 and H2 as gas sources. Results of microstructural analysis suggest that a ‘solid solution strengthening’ promotes the hardness of a TiSiN film deposited at a lower SiH4 flow rate. A higher SiH4 flow rate induces the precipitation of an α-Si3N4 phase in the deposited TiSiN films and reduces the hardness value." @default.
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- W1980168246 date "1996-04-01" @default.
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- W1980168246 title "Micro structure and properties of TiSiN films prepared by plasma-enhanced chemical vapor deposition" @default.
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- W1980168246 doi "https://doi.org/10.1016/0254-0584(95)01655-e" @default.
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