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- W1980183363 abstract "Pentacene organic thin-film transistor (OTFT) with HfYO as gate dielectric has been fabricated at room temperature on adhesive flexible vacuum tape and shows high performance. The threshold voltage is as low as −1.77 V due to the high-κ gate dielectric employed. A small sub-threshold swing (SS) of 0.145 V/dec indicates good interface between the gate dielectric and pentacene film. Atomic force microscopy (AFM) reveals that large pentacene gains form on the HfYO gate dielectric, leading to a high carrier mobility of 0.236 cm2V−1s−1. These good results suggest that the adhesive vacuum tape can be used as the substrate for adhesive flexible OTFT, and HfYO is a promising gate dielectric for high-performance pentacene OTFT." @default.
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- W1980183363 date "2015-04-01" @default.
- W1980183363 modified "2023-10-17" @default.
- W1980183363 title "Pentacene organic thin‐film transistor with HfYO gate dielectric made on adhesive vacuum tape" @default.
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- W1980183363 doi "https://doi.org/10.1049/el.2015.0118" @default.
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