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- W1980214366 abstract "This letter provides, for the first time, experimental evidence supporting that hot-carrier injection not only degrades electrical performance in drain-extended MOS transistors with shallow trench isolation (STI DeMOS) but also induces a severe gate-oxide (Gox) degradation and wear-out of the oxide. During the Gox degradation at high-stress conditions, a steep increase of interface traps ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>N</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ) and oxide traps ( <i xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>N</i> <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</sub> ) is detected in the accumulation region by using charge pumping. A subsequent fast degradation of the device electrical characteristics is observed." @default.
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- W1980214366 date "2012-09-01" @default.
- W1980214366 modified "2023-10-16" @default.
- W1980214366 title "Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors" @default.
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- W1980214366 doi "https://doi.org/10.1109/led.2012.2202632" @default.
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