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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1980299058> ?p ?o ?g. }

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• W1980299058 abstract "In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed." @default.
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• W1980299058 date "2011-05-16" @default.
• W1980299058 modified "2023-09-26" @default.
• W1980299058 title "Low activation energy, high-quality oxidation of Si and Ge using neutral beam" @default.
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• W1980299058 doi "https://doi.org/10.1063/1.3592576" @default.
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