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• W1980361570 startingPage "A491" @default.
• W1980361570 abstract "The influence of carrier localization on photoluminescence efficiency droop and stimulated emission is studied in AlGaN multiple quantum wells with different strength of carrier localization. We observe that carrier delocalization at low temperatures predominantly enhances the nonradiative recombination and causes the droop, while the main effect of the delocalization at elevated temperatures is enhancement of PL efficiency due to increasing contribution of bimolecular recombination of free carriers. When the carrier thermal energy exceeds the dispersion of the potential fluctuations causing the carrier localization, the droop is caused by stimulated carrier recombination." @default.
• W1980361570 created "2016-06-24" @default.
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• W1980361570 date "2014-02-27" @default.
• W1980361570 modified "2023-09-27" @default.
• W1980361570 title "Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells" @default.
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• W1980361570 doi "https://doi.org/10.1364/oe.22.00a491" @default.
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