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- W1980365305 endingPage "105104" @default.
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- W1980365305 abstract "Novel amorphous oxide semiconductor thin film transistors (AOS-TFTs) have already stepped up as an alternative solution for application in mass-produced active matrix organic light-emitting diodes, as well as flexible and transparent electronics. However, the factors related to the device properties (mobility (µsat) and stability (�V th)) are still unclear. Since most factors are strongly related to oxygen elements, the versatile thermo-pressure-induced process (TPP) has been applied to improve novel TaInZnO TFT performances with regard to mobility and stability by controlling the oxygen pressure, resulting in the optimum values" @default.
- W1980365305 created "2016-06-24" @default.
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- W1980365305 date "2014-02-19" @default.
- W1980365305 modified "2023-09-23" @default.
- W1980365305 title "Origin of electrical improvement of amorphous TaInZnO TFT by oxygen thermo-pressure-induced process" @default.
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- W1980365305 doi "https://doi.org/10.1088/0022-3727/47/10/105104" @default.
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