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- W1980370100 abstract "A new simple phenomenological relation between the breakdown voltage V b and the bandstructure in semiconductor junctions is presented. For narrow-gap semiconductors, V b scales with the minimum energy gap ( E g ) as has been previously reported. However, for wide-gap materials including GaAs, InP, etc., V b is linearly dependent on < E >, a Brillouin-zone-averaged energy gap. Values of < E > are determined from accurate quasi-particle bandstructures for 25 tetrahedral semiconductors. We discuss the origin of this relation and the role of the ionisation probability and electron-phonon scattering rate. The relation can be used to predict the breakdown voltage in semiconductors and semiconductor alloys." @default.
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- W1980370100 date "1997-03-01" @default.
- W1980370100 modified "2023-09-27" @default.
- W1980370100 title "“Universal” Dependence of Avalanche Breakdown on Bandstructure: Choosing Materials for High-Power Devices" @default.
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- W1980370100 doi "https://doi.org/10.1143/jjap.36.1529" @default.
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