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- W1980372656 abstract "Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g)." @default.
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- W1980372656 date "2010-09-01" @default.
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- W1980372656 title "Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3" @default.
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- W1980372656 doi "https://doi.org/10.1016/j.jcrysgro.2010.06.021" @default.
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