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- W1980506915 abstract "Abstract Boron, aluminium and gallium ions were implanted at 600 keV in a crystalline Si-(001) target for tilt angles 11.6 °, 33.7 °, 63 °, 73 ° and 83 °. The depth profiles of the implanted impurities were measured with secondary ion mass spectrometry. These experimental data are compared with simulated impurity distributions from the Monte Carlo code MARLOWE (version 12). Projected range, lateral and longitudinal spread are discussed." @default.
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- W1980506915 date "1989-06-01" @default.
- W1980506915 modified "2023-09-27" @default.
- W1980506915 title "Tilted angle implantations of B, Al and Ga in single crystalline Si" @default.
- W1980506915 cites W2048753544 @default.
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- W1980506915 doi "https://doi.org/10.1016/0168-583x(89)90700-3" @default.
- W1980506915 hasPublicationYear "1989" @default.
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