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- W1980654467 abstract "We have theoretically examined the scaling of the Al 2 O 3 /InAlAs/InGaAs QW FET one of the proposed III-V channel MOSFET's designed to replace the conventional SiO 2 /Si structures. To accomplish this we have used a Schroedinger – Poisson – Continuity equation model that is fully 2-dimentional ie all equations are solved along and perpendicular to the channel. We have found out that for the threshold voltage V T to be around zero volts a Schottky barrier Φ Β of 3.5 - 4.0eV is necessary. Both Cu or W will suffice. for this. The V T value moves by 0.7 as the device is scaled from 65 nm gate length L g to 25nm. Furthermore, as the L g is scaled to the desired 20nm value the subthreshold slope SS increases from 90meV/dec to about 170meV/dec guaranteeing fast switching." @default.
- W1980654467 created "2016-06-24" @default.
- W1980654467 creator A5060142283 @default.
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- W1980654467 date "2011-11-01" @default.
- W1980654467 modified "2023-09-25" @default.
- W1980654467 title "Threshold Voltage and Sub-Threshold Slope Variation with Gate-Length in Al<sub>2</sub>O<sub>3</sub>/InAlAs/InGaAs Quantum Well (QW) FET's" @default.
- W1980654467 cites W1988951675 @default.
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- W1980654467 doi "https://doi.org/10.4028/www.scientific.net/kem.495.112" @default.
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