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• W1980914334 abstract "In the present paper, the diffusion barrier properties of amorphous and nanocrystalline (NC) Ta films, and the interface microstructure of Ta/Cu were investigated as a function of annealing temperature. X-ray diffraction, scanning electron microscopy, cross-sectional transmission electron microscopy, and energy-dispersive spectrometer line scans were employed to study the microstructure evolution and diffusion behavior. It was found that an amorphous layer with a thickness of ∼5 nm formed at the interface of NC Ta/Cu at 450 °C annealing, while the interface of amorphous-Ta/Cu was still abrupt. Moreover, amorphous-Ta film acts as an effective diffusion barrier up to temperatures of 650 °C, which is higher than that for NC-Ta film. The fast diffusion along grain boundaries inside NC-Ta films is suggested to be responsible for the main failure of NC-Ta film." @default.
• W1980914334 created "2016-06-24" @default.
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• W1980914334 date "2009-12-01" @default.
• W1980914334 modified "2023-10-02" @default.
• W1980914334 title "Diffusion barrier properties of amorphous and nanocrystalline Ta films for Cu interconnects" @default.
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• W1980914334 doi "https://doi.org/10.1063/1.3266164" @default.
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