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- W1980930452 abstract "Phosphorus-doped polycrystalline and homoepitaxial diamond films were grown using both microwave and dc plasma assisted chemical vapor deposition. P incorporation was quantified using secondary ion mass spectrometry, and was approximately ten times greater for polycrystalline films deposited using dc plasmas compared to microwave plasmas. For microwave-assisted growth, P incorporation was approximately ten times greater in polycrystalline than homoepitaxial films. These effects appear to be due to preferential incorporation at grain boundaries, since higher levels of P are measured in samples with smaller grains. The films were highly electrically resistive, with conductivities of 10−10–10−9/Ω cm at room temperature." @default.
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- W1980930452 date "1994-02-28" @default.
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- W1980930452 title "Phosphorus incorporation in plasma deposited diamond films" @default.
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- W1980930452 doi "https://doi.org/10.1063/1.110943" @default.
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