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- W1981005639 abstract "The degradation by 1 and 4.5 MeV electrons and 10–600 MeV protons of conventional n+-p cells designed for space was studied using separate measurements of the carrier diffusion length, lifetime and mobility and their variation with the carrier injection level. The following comparisons were made. (a) The cell base degradation was compared with theoretical calculations of the number of atoms displaced as a function of particle energy. (b) The changes in lifetime of bulk samples were compared with the changes in lifetime of the base of cells made of the same silicon material. (c) The degradation of the emitter region and of the region close to the space charge region was investigated. In all the solar cells irradiated with 10–600 MeV protons a large room temperature recovery was observed. After the recovery the cell base lifetime damage agreed with (a) the variation in damage with increasing proton energy predicted theoretically and (b) the amount and quality of lifetime damage induced in the bulk samples. No room temperature recovery was observed after electron irradiation; however, the 4.5 MeV bulk sample degradation agreed with the smooth increase predicted theoretically, in contrast with the 1 MeV cell base degradation. Moreover, noticeable changes in the “operational” carrier lifetime of the emitter region and in the carrier mobility of the region close to the space charge region were recorded in cells irradiated with 10 MeV protons, especially for the lowest fluence range." @default.
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- W1981005639 date "1980-09-01" @default.
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- W1981005639 title "Changes in lifetime and diffusion length due to the electron and proton bombardment of silicon solar cells" @default.
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- W1981005639 doi "https://doi.org/10.1016/0379-6787(80)90096-4" @default.
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