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- W1981010849 abstract "Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage (Vth) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy (VO). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a Vth controller, resulting in the enhancement of stability of TFTs." @default.
- W1981010849 created "2016-06-24" @default.
- W1981010849 creator A5052649021 @default.
- W1981010849 date "2013-05-01" @default.
- W1981010849 modified "2023-09-24" @default.
- W1981010849 title "Investigation on the Stability Enhancement of Oxide Thin Film Transistor" @default.
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- W1981010849 doi "https://doi.org/10.4313/jkem.2013.26.5.351" @default.
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