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- W1981014702 abstract "The lamellar structure of Al single crystals grown in pure and Sn-doped Al films in the presence of oxygen contamination is investigated by cross sectional transmission electron microscopy. The lamellae are parallel with the Al(111) planes. According to the EELS investigations of Al-20% Sn films, the lamellae are separated by interface layers containing oxygen and Sn. The lamellar structure is a growth structure formed by the nucleation and growth of islands of the lamellae. The interface can be formed by the process-induced segregation of oxygen on the (111) Al crystal faces." @default.
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- W1981014702 date "1994-11-16" @default.
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- W1981014702 title "Peculiar lamellar structure in Al single crystals grown in oxygen-doped Al and Al-Sn thin films" @default.
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- W1981014702 doi "https://doi.org/10.1002/pssa.2211460127" @default.
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