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- W1981018138 abstract "Etch resistance of 193nm resist is known to be limited compared to previous polymer chemistries like for novolac and 248nm resists. While for 248nm resists the etch resistance is mainly provided by the poly(hydroxystyrene) polymer backbone, the 193nm resist etch resistance is based on different protecting groups [R.R. Dammel et al., Proc. SPIE 3333 (1998) 144-151]. For the acrylate platform, these groups have a high carbon content due to saturated cycles. Nevertheless, the weaker etch resistance of the 193nm resists is becoming more and more an issue because of the film budget. It is therefore of interest to keep the etch properties as good as possible during the etch step. This work is focused on evaluating the impact of reactive oxide ion etching on the commercially available Rohm and Haas 248nm UV5 resist as a reference and on two 193nm positive tone resists (resists A and B) in order to understand the resist degradation during plasma etch. Resists were characterized before and after an oxide etch step and we have been able to outline that the 248nm resist shows quite no modifications compared to what happens to the polymer of the 193nm resists. Transformation is pointed out by the change of carbonyl peak intensity shown on the FTIR spectra and also by the thermal behavior of both resists after the etch. In addition, film thickness loss during etch was monitored in order to give an indication on the etch rates and the film roughness was because it is related to local etch properties and therefore can be worsen by resist deprotection. therefore can be worsen by resist deprotection." @default.
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- W1981018138 date "2006-04-01" @default.
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- W1981018138 title "Investigating 248 and 193nm resist degradation during reactive ion oxide etching" @default.
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- W1981018138 doi "https://doi.org/10.1016/j.mee.2006.01.169" @default.
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