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- W1981062991 abstract "A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals have been successfully demonstrated. The process is simple and mask free. For the 3-nm-thick channel devices, the S.S. of 88 mV/dec and I on /I off ratio of more than 108 can be achieved. Extreme low applied voltage for band-to-band-tunneling-induced hot electron injection tunneling (BBHE) operation and excellent retention are proposed." @default.
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- W1981062991 date "2012-06-01" @default.
- W1981062991 modified "2023-10-18" @default.
- W1981062991 title "A novel gate-all-around ultra-thin p-channel poly-Si TFT functioning as transistor and flash memory with silicon nanocrystals" @default.
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- W1981062991 doi "https://doi.org/10.1109/snw.2012.6243321" @default.
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