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• W1981102502 abstract "The generation of a bulk positive charge in SiO2 layers of silicon gate metal-oxide-silicon (MOS) devices, under the conditions of high-field and charge injection is studied. The time dependence of the positive charge and its spatial distribution as a function of the oxide thickness and electric field are all consistent with an impact ionization-recombination model which takes into account both the spatial and the field dependence of the ionization probability. The nature of the ionization, either band-to-band, or traps ionization, is still unknown. Bulk positive charge of the same nature is also formed in Al gate oxides. Nevertheless, it was not always observed in previous works since a much larger Si-SiO2 interfacial positive charge is also generated in these samples." @default.
• W1981102502 created "2016-06-24" @default.
• W1981102502 creator A5043103031 @default.
• W1981102502 creator A5063715934 @default.
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• W1981102502 date "1985-04-15" @default.
• W1981102502 modified "2023-09-23" @default.
• W1981102502 title "High-field and current-induced positive charge in thermal SiO2 layers" @default.
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• W1981102502 doi "https://doi.org/10.1063/1.335219" @default.
• W1981102502 hasPublicationYear "1985" @default.
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