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- W1981114177 abstract "We have investigated the effect of the surface roughness and surface wettability of silicon dioxide (SiO2) on the threshold voltage shift caused by gate bias stressing in organic field-effect transistors (OFETs). We observed that the threshold voltage shift was extremely sensitive to changes in the small roughness of the SiO2 surface; the shift increased with roughness. On the other hand, the threshold voltage shift was not significantly affected by the wettability of the SiO2 surface. The large shift in OFETs with rough SiO2 insulators can be attributed to lattice distortion in pentacene layers deposited on rough SiO2 surfaces. We observed that long-time application of gate bias stress caused not only a threshold voltage shift but also a mobility decrease." @default.
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- W1981114177 date "2009-04-20" @default.
- W1981114177 modified "2023-10-18" @default.
- W1981114177 title "Effect of Silicon Dioxide Surface on Bias Stress Effect for Organic Field-Effect Transistors" @default.
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- W1981114177 doi "https://doi.org/10.1143/jjap.48.04c170" @default.
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