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• W1981117198 abstract "The use of the indium chelate derived from dipivaloyl methane, in combination with dibutyl tin diacetate, has been investigated as a CVD technique for the preparation of transparent highly conducting layers of tin-doped indium oxide. A set of optimized deposition conditions is presented together with important optical, electrical, structural and chemical properties of the films. Typical films of the doped indium oxide have n-type resistivity in the range 2.2×10-4 to 7.1×10-4Ωcm. Films with the lowest resistivity exhibit an optimum dopant concentration of around 8 at.% tin in In2O3:Sn. Coatings have been prepared on quartz or glass substrates with sheet resistances of 10–50 Ω/□ and optical transmission in excess of 80% net throughout the visible spectrum." @default.
• W1981117198 created "2016-06-24" @default.
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• W1981117198 date "1975-09-01" @default.
• W1981117198 modified "2023-10-12" @default.
• W1981117198 title "Chemical vapor deposition of transparent electrically conducting layers of indium oxide doped with tin" @default.
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• W1981117198 doi "https://doi.org/10.1016/0040-6090(75)90224-2" @default.
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