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• W1981130398 abstract "Platinum thin films were grown at 300 °C by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The films had excellent uniformity, low resistivity, and low-impurity contents. Structural studies by X-ray diffraction showed that the films were strongly (111) oriented. Growth rates of 0.45 Å cycle-1 were obtained with 4 s total cycle times. The film thickness was found to linearly depend on the number of the reaction cycles. Also, the possible reaction mechanism is discussed." @default.
• W1981130398 created "2016-06-24" @default.
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• W1981130398 date "2003-04-09" @default.
• W1981130398 modified "2023-10-14" @default.
• W1981130398 title "Atomic Layer Deposition of Platinum Thin Films" @default.
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• W1981130398 doi "https://doi.org/10.1021/cm021333t" @default.
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