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- W1981132019 abstract "We have observed very large tunneling magnetoresistance (TMR) in epitaxially grown ${mathrm{Ga}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{As}/mathrm{AlAs}/{mathrm{Ga}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{As}$ ferromagnetic semiconductor tunnel junctions. Large TMR ratios more than $70%$ (maximum $75%$) were obtained in junctions with a very thin ( $ensuremath{le}1.6mathrm{nm}$) AlAs tunnel barrier when the magnetic field was applied along the $[100]$ axis in the film plane. The TMR was found to rapidly decrease with increasing barrier thickness, which is explained by calculations assuming that the parallel wave vector of carriers is conserved in tunneling." @default.
- W1981132019 created "2016-06-24" @default.
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- W1981132019 date "2001-06-22" @default.
- W1981132019 modified "2023-10-05" @default.
- W1981132019 title "Large Tunneling Magnetoresistance in GaMnAs<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>/</mml:mi></mml:math>AlAs<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mi>/</mml:mi></mml:math>GaMnAs Ferromagnetic Semiconductor Tunnel Junctions" @default.
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- W1981132019 doi "https://doi.org/10.1103/physrevlett.87.026602" @default.
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