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• W1981186192 abstract "The initial surface reaction mechanisms of atomic layer deposition TiO 2 on H/Si (100 )-2×1 surface using Ti (OCH 3 ) 4 and H 2 O as precursors are investigated by density functional theory. The ALD process is divided into two half-reactions, i.e., Ti (OCH 3 ) 4 and H 2 O half-reactions. The adsorption energy of Ti (OCH 3 ) 4 on H/Si (100)2×1 surface is only-2.4 kJ/mol. The overall reaction of Ti (OCH 3 ) 4 is exothermic, which indicates that Ti (OCH 3 ) 4 half-reactions are favorable on thermodynamic. Howerver, H 2 O half-reactions are endothermic and thermodynamically unfavorable." @default.
• W1981186192 created "2016-06-24" @default.
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• W1981186192 date "2013-08-01" @default.
• W1981186192 modified "2023-09-27" @default.
• W1981186192 title "Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO₂ on H/Si(100)-2×1 Surface" @default.
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• W1981186192 doi "https://doi.org/10.4028/www.scientific.net/amr.750-752.1052" @default.
• W1981186192 hasPublicationYear "2013" @default.
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