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• W1981221801 abstract "Recently, a set of generalized gradient-based optical proximity correction (OPC) optimization methods have beendeveloped to solve for the forward and inverse lithography problem under the thin-mask assumption, where themask is considered a thin 2-D object. However, as the critical dimension printed on the wafer shrinks into thesubwavelength regime, thick-mask effects become prevalent and thus these effects must be taken into account inOPC optimization methods. OPC methods derived under the thin-mask assumption have inherent limitationsand perform poorly in the subwavelength scenario. This paper focuses on developing model-based forward binarymask optimization methods which account for the thick-mask effects of coherent imaging systems. The boundarylayer (BL) model is exploited to simplify and characterize the thick-mask effects, leading to a computationallyefficient OPC method. The BL model is simpler than other thick-mask models, treating the near field of the maskas the superposition of the interior transmission areas and the boundary layers. The advantages and limitationsof the proposed algorithm are discussed and several illustrative simulations are presented." @default.
• W1981221801 created "2016-06-24" @default.
• W1981221801 creator A5005357824 @default.
• W1981221801 creator A5031836304 @default.
• W1981221801 date "2010-03-11" @default.
• W1981221801 modified "2023-09-23" @default.
• W1981221801 title "Binary mask optimization for forward lithography based on boundary layer model in coherent systems" @default.
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• W1981221801 doi "https://doi.org/10.1117/12.836858" @default.
• W1981221801 hasPublicationYear "2010" @default.
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