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• W1981256411 abstract "Precise control of ion range and ionisation rate makes ion beam induced luminescence (IBL) a useful analytical technique for studying thin films. Combinations of IBL and cathodo-luminescence (CL) offer complementary information. In the present studies of thin films of alumina produced by pulsed laser deposition (PLD), they reveal the influence of PLD growth conditions. Strong sensitisation from the presence of a layer of copper nanoparticles, changes in nanoparticles following thermal treatments and a range of intrinsic defects in the layers were observed. For multilayer films the IBL was particularly useful in noting signals from the deeper layers. Some data were also recorded for sol–gel alumina films grown on silica or borosilicate glass." @default.
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• W1981256411 date "2002-05-01" @default.
• W1981256411 modified "2023-09-30" @default.
• W1981256411 title "Ion beam induced luminescence of thin films" @default.
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• W1981256411 doi "https://doi.org/10.1016/s0168-583x(01)01256-3" @default.
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