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• W1981356208 abstract "The effects of temporary bonding processes on thin wafer handling were investigated. Backside dielectric curing process was found to be a critical process for the void formation in the thin wafer handling which was confirmed by scanning acoustic microscope and by thermo-gravimetric analyzer out-gassing analysis. The effects of voids on back-side wafer processes were discussed. Finally, 3-D through silicon via integration with thin wafer handling (50 μm in thickness) was demonstrated with selected dielectric passivation material and temporary bonding adhesives." @default.
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• W1981356208 date "2011-12-01" @default.
• W1981356208 modified "2023-09-27" @default.
• W1981356208 title "Compatibility of Dielectric Passivation and Temporary Bonding Materials for Thin Wafer Handling in 3-D TSV Integration" @default.
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• W1981356208 doi "https://doi.org/10.1109/tcpmt.2011.2162435" @default.
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