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- W1981454448 abstract "The intersubband absorption of cubic GaN/Al(Ga)N quantum wells is studied experimentally and theoretically over a wide spectral range. By changing the quantum well thickness it is possible to tune the intersubband absorption peak wavelength from 1.4 ensuremath{mu}m (214 THz) to 63 ensuremath{mu}m (4.76 THz). Comparing the experimental results with simulations based on the effective-mass model we demonstrate that the GaN/AlN conduction-band offset is higher than 1.2 eV. The best fit with the experimental data is achieved for a conduction-band offset of 1.4 eV and for a GaN effective mass of 0.11${m}_{0}$." @default.
- W1981454448 created "2016-06-24" @default.
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- W1981454448 date "2011-02-23" @default.
- W1981454448 modified "2023-10-18" @default.
- W1981454448 title "Intersubband absorption of cubic GaN/Al(Ga)N quantum wells in the near-infrared to terahertz spectral range" @default.
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- W1981454448 doi "https://doi.org/10.1103/physrevb.83.075313" @default.
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