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- W1981508326 abstract "Abstract The Y 3+ -doped indium zinc oxide thin film transistor devices were fabricated by the sol–gel spin-coating technique. The Y 3+ -doped indium zinc oxide thin film transistor operates in n-channel enhancement mode and exhibits a well-defined pinch-off and saturation region. Because yttrium ion possesses lower electronegativity (1.22) and standard electrode potential (−2.372 V), it can act as the carrier suppressor to reduce the carrier concentrations of indium zinc oxide (In:Zn = 1:1) thin films from 1.29 × 10 20 to 3.05 × 10 14 cm −3 with the increase of Y 3+ doping concentrations from 0 to 12 mol%. In addition, Y 3+ (12 mol%)-doped indium zinc oxide thin film has the minimal surface roughness (1.067 nm) and lowest trap states (5.14 × 10 12 cm −2 ). Therefore, Y 3+ (12 mol%)-doped indium zinc oxide thin film transistor possesses the optimum performance, and its field-effect mobility in the saturated regime, threshold voltage, on–off ratio, and S-factor are 4.76 cm 2 /Vs, 4.3 V, 1.32 × 10 6 , and 2.9 V/decade, respectively." @default.
- W1981508326 created "2016-06-24" @default.
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- W1981508326 date "2013-11-01" @default.
- W1981508326 modified "2023-09-27" @default.
- W1981508326 title "Enhanced performance of indium zinc oxide thin film transistor by yttrium doping" @default.
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- W1981508326 doi "https://doi.org/10.1016/j.apsusc.2013.07.111" @default.
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