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- W1981508906 abstract "Barrier heights between as-deposited (300 °C substrate temperature) Schottky contacts between Re and Os, and 〈100〉 n-Si have been measured, by photoelectric response and analysis of forward I-V data to 0.77 eV for Re, and 0.85 eV for Os. The trend of barrier heights for the 5d series elements, Hf-Ta-W-Re-Os-Ir-Pt-Au is discussed and compared with quantities which have been correlated with the value of the barrier height, viz. work function, electronegativity, and heat of formation for the appropriate silicide. The comparison gives some preference for the simple correlation with work function." @default.
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- W1981508906 date "1980-02-15" @default.
- W1981508906 modified "2023-10-16" @default.
- W1981508906 title "Barrier height of Re and Os contacts to<i>n</i>‐silicon" @default.
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- W1981508906 doi "https://doi.org/10.1063/1.91475" @default.
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