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• W1981518339 abstract "Transistor operation by common emitter (CE) current modulation is shown for the first time in III-N hot electron transistors (HETs). The emitter and collector barriers (φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BE</sub> and φ <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>BC</sub> ) are implemented using Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.45</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.55</sub> N and In <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.1</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.9</sub> N layers as polarization dipoles, respectively. CE modulation is achieved by increasing the E-B barrier height beyond the B-C barrier height by increasing the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.45</sub> Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>0.55</sub> N thickness (t). Similar CE performance is seen in the identical HET structures grown on both bulk GaN and sapphire. A maximum α of ~0.3 is achieved using a GaN base thickness of 10 nm. The InGaN dipole used as the collector barrier is shown to be instrumental in enabling ohmic base contacts, low base sheet resistance, and low collector leakage, simultaneously." @default.
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• W1981518339 date "2015-01-01" @default.
• W1981518339 modified "2023-09-27" @default.
• W1981518339 title "Design Space of III-N Hot Electron Transistors Using AlGaN and InGaN Polarization-Dipole Barriers" @default.
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• W1981518339 doi "https://doi.org/10.1109/led.2014.2373375" @default.
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