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• W1981547647 abstract "We report the demonstration of site-controlled InAs/GaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) by selective metalorganic chemical vapor deposition. InAs/GaAs quantum-dot-in-nanowires (QD-in-NWs) with various InAs thicknesses are realized on patterned GaAs(111)B substrates in the form of InAs/GaAs heterostructures and identified by structural analyses using scanning transmission electron microscopy and photoluminescence characterization. Sharp excitonic emission peaks at 10 K from single QD-in-NWs with the narrowest exciton linewidth of 87 μeV are observed. Light emission from the single QD-in-NW shows photon antibunching, along with biexciton-exciton cascaded emission process, which evidences single photon emission from high-quality QD-in-NWs." @default.
• W1981547647 created "2016-06-24" @default.
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• W1981547647 date "2012-06-25" @default.
• W1981547647 modified "2023-10-11" @default.
• W1981547647 title "Site-controlled formation of InAs/GaAs quantum-dot-in-nanowires for single photon emitters" @default.
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• W1981547647 doi "https://doi.org/10.1063/1.4731208" @default.
• W1981547647 hasPublicationYear "2012" @default.
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