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- W1981606019 abstract "ZnSe0.2Te0.8 nanowires are synthesized via a thermal evaporation method, and the structure characterizations reveal that the as-synthesized nanowires have wurtzite structure with crystal growth direction of [001]. Nano-field-effect transistors are fabricated based on individual nanowire, and the electrical properties demonstrate that the ZnSe0.2Te0.8 nanowires have p-type conductivity with a mobility (μh) of 0.2 cm2 V−1 S−1 and carrier concentration (nh) about 8×1018 cm−3. The as-prepared nanowires with significant p-type conductivity will be a very attractive candidate for nanoelectronic devices." @default.
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- W1981606019 date "2013-06-01" @default.
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- W1981606019 title "Synthesis and electrical properties of ZnSe0.2Te0.8 nanowires" @default.
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- W1981606019 doi "https://doi.org/10.1016/j.matlet.2013.02.054" @default.
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