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- W1981696742 abstract "We have investigated the optical properties of thermally stabilized, ion implantation amorphized silicon by ellipsometry in the wavelength region 632.8–365.0 nm during solid phase epitaxial regrowth (SPEG) process. The Si wafers were amorphized by implantation of Si, P and Xe ions in the 40–700 keV energy region. Furnace annealing was done at 550°C for different times. It was found that the optical properties (complex dielectric function and complex refractive index) of the thermally stabilized amorphous silicon are between those of the as-implanted and monocrystalline silicon. We propose a very simple fine-grain polycrystalline model for thermally stabilized silicon with a grain size of about or less than 2 run." @default.
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- W1981696742 date "1987-01-01" @default.
- W1981696742 modified "2023-10-16" @default.
- W1981696742 title "Optical properties of thermally stabilized ion implantation amorphized silicon" @default.
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- W1981696742 doi "https://doi.org/10.1016/s0168-583x(87)80115-5" @default.
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