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- W1981719382 abstract "Silicon direct nitridation has been successfully done using purified ammonia gas and an ArF excimer laser (λ=193 nm). Direct nitride films were grown at a substrate temperature of 400 °C and a laser pulse energy of 15 mJ/pulse cm2. As far as Auger signal intensities are concerned, there is little difference between the excimer laser enhanced nitrided films grown at 400 °C and thermally nitrided films grown at 1000 °C. The maximum film thickness grown is limited to 2.5 nm at 400 °C by diffusion of nitridation species across the grown film. The temperature rise on the substrate surface irradiated by the laser was calculated and found to be around 50 °C. Therefore, the thermal effect of the laser irradiation is of little significance in this experiment. The photochemically dissociated products of ammonia molecules were investigated by a quadrupole mass analyzer. The photochemically generated NH2 radicals seem to enhance the nitridation." @default.
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- W1981719382 date "1984-11-01" @default.
- W1981719382 modified "2023-10-16" @default.
- W1981719382 title "Excimer laser enhanced nitridation of silicon substrates" @default.
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- W1981719382 doi "https://doi.org/10.1063/1.95466" @default.
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