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- W1981786721 abstract "The use of an InP thin film solar cell on an Si substrate is proposed; its qualities of high efficiency and high radiation resistance are important in minimizing cost and weight. The advantages of InP over GaAs and Si as a thin film solar cell material are discussed. The photovoltaic properties of the InP thin film solar cell are calculated by considering the dislocation effect upon the minority-carrier diffusion length in the thin film. It is estimated that one can fabricate InP thin film solar cells on Si substrates, with an efficiency of 18% or more, if the dislocation density in the InP film is less than 106 cm−2." @default.
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- W1981786721 date "1986-11-01" @default.
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- W1981786721 title "A new approach for thin film InP solar cells" @default.
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- W1981786721 doi "https://doi.org/10.1016/0379-6787(86)90052-9" @default.
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