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• W1981834599 abstract "A mixture of ZnO nanoparticles and polymethylmethacrylate was used as an active layer in a nonvolatile resistive memory device. Current-voltage characteristics of the device showed nonvolatile write-once-read-many-times memory behavior with a switching time on the order of μs. The device exhibited an on/off ratio of 104, retention time of &gt;105 s, and number of readout of &gt;4 × 104 times under a read voltage of 0.5 V. The emission, cross-sectional high-resolution transmission electron microscopy (TEM), scanning TEM-high angle annular dark field imaging, and energy dispersive x-ray spectroscopy elemental mapping measurements suggest that the electrical switching originates from the formation of conduction paths." @default.
• W1981834599 created "2016-06-24" @default.
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• W1981834599 date "2011-12-05" @default.
• W1981834599 modified "2023-10-14" @default.
• W1981834599 title "High-performance nonvolatile write-once-read-many-times memory devices with ZnO nanoparticles embedded in polymethylmethacrylate" @default.
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• W1981834599 doi "https://doi.org/10.1063/1.3665937" @default.
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